? 2003 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c15a i c90 t c = 90 c8a i cm t c = 25 c, 1 ms 48 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 ? i cm = 24 a (rbsoa) clamped inductive load, l = 300 h @ 0.8 v ces p c t c = 25 c85w t j -40 ... +150 c t jm 150 c t stg -40 ... +150 c v isol isolation voltage 2500 v weight 2g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s ds98943b(07/03) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ge = v ge 2.5 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 125 c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i t , v ge = 15 v 2.1 2.7 v v ces = 600 v i c25 =15 a v ce(sat) = 2.7 v t fi(typ) =55 ns hiperfast tm igbt isoplus247 tm (electrically isolated back surface) features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low collector to tab capacitance (<35pf) z 3rd generation hdmos tm process v ce (sat) z rugged polysilicon gate cell structure applications z pfc circuits z ac motor control z switched-mode and resonant-mode power supplies, ups, no screws, or isolation foils z dc choppers advantages z easy assembly z low capacitance to ground, low emi ixgc 12n60c ixgc 12n60cd1 advance technical information isoplus220 tm isolated back surface* ixgc ixgc - cd1 e153432 see ixga12n60c data sheet for igbt characteristic curves
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i t ; v ce = 10 v, 7 11 s pulse test, t 300 s, duty cycle 2 % c ies 860 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 64 pf c res 15 pf q g 32 nc q ge i c = i t , v ge = 15 v, v ce = 0.5 v ces 10 nc q gc 10 nc t d(on) 20 ns t ri 20 ns t d(off) 60 ns t fi 55 ns e off 0.09 mj t d(on) 20 ns t ri 20 ns e on 0.15 mj t d(off) 85 180 ns t fi 85 180 ns e off 0.27 0.60 mj r thjc 1.6 k/w r thck 0.25 k/w inductive load, t j = 25 c i c = i t , v ge = 15 v, l = 300 h v ce = 0.8 ? v ces , r g = r off = 18 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = i t , v ge = 15 v, l = 300 h v ce = 0.8 ? v ces , r g = r off = 18 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g ixgc 12n60c ixgc 12n60cd1 note: i t = 12a isoplus 220 outline notes: 1. lead 1 = gate 2. lead 2 = collector 3. lead 3 = emitter 4. back surface 4 is electrically isolated from leads 1, 2 & 3 reverse diode (fred) (IXGC12N60CD1 only) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 15a; t vj = 150 c 1.7 v t vj = 25 c 2.5 v i rm v r = 100 v; i f =25a; -di f /dt = 100 a/ s 2 2.5 a l < 0.05 h ; t vj = 100 c t rr i f = 1 a; -di/dt = 50 a/ s; v r = 30 v t j = 25 c35ns r thjc diode 1.6 k/w
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